The damages in HgCdTe dry etching were studied. The contact hole of HgCdTe samples were fabricated by inductively coupled plasma(ICP) dry etching and wet etching. The morphology of the etched surface were analyzed by scanning electron microscope(SEM) and laser scanning microscope(LSM),and the damages were analyzed by the current-voltage characteristic curve. The experiment results show that the p-type hole of HgCdTe sample can easily be converted to n-type hole by using dry etching,so a kind of new dry mixed etching technique is proposed. It uses two step dry etching and can effectively reduce the introduced damage.
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宁提,陈慧卿,谭振,张敏,刘沛.碲镉汞p型接触孔低损伤干法刻蚀技术研究[J].激光与红外,2018,48(5):601~604 NING Ti, CHEN Hui-qing, TAN Zhen, ZHANG Min, LIU Pei. Study on low damage dry etching technique of HgCdTe p-type contact hole[J]. LASER & INFRARED,2018,48(5):601~604