The recent development of p+-on-n LW HgCdTe heterostructure double-layer materials and devices was reported,and the fabrication of p+-on-n HgCdTe heterostructure materials was studied emphatically.The n-type HgCdTe(MCT) absorber layer was grown by liquid-phase epitaxy(LPE) on CdZnTe(CZT) substrate,and the cap layers were grown by vertical LPE(VLPE) from Hg-rich melts doped with arsenic,thus,double-layer heterostructure materials was obtained.The p+-on-n HgCdTe heterostructure mesa device was gotten by using wet etching,plasma dry processing technique and passivation.The p+-on-n heterojunction devices can effectively overcome low minority carrier lifetime,and have lower dark current and higher R0A in long waveband and very long waveband,so it has an important meaning for the performance of LWIR and VLWIR detectors.
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田震,宋淑芳,王小菊,周立庆.碲镉汞p-on-n长波异质结探测器材料的制备研究[J].激光与红外,2018,48(6):730~734 TIAN Zhen, SONG Shu-fang, WANG Xiao-ju, ZHOU Li-qing. Study on fabrication of p-on-n LW HgCdTe heterostructure materials[J]. LASER & INFRARED,2018,48(6):730~734