Wet-chemical etching process of InAs/GaSb Type-II superlattice with different etchants was studied.A kind of mixed etchant was selected according to etching effect,it is composed of citric acid,phosphoric acid and hydrogen peroxide.This etchant has stable etching rate and low undercutting effect,and the morphology of the material surface is good after etching.In addition,the influence of different etchant temperatures,concentrations and composition proportions on etching rate,morphology and lateral etching were also studied.The experimental results show that when volume ratio of citric acid,phosphoric acid,hydrogen peroxide and water is 1∶1∶1∶40 etching rate is about 9.48nm/s at room temperature of 20 ℃.