The recent progress on molecular beam epitaxy growth of SW/MW dual band HgCdTe on Si composite substrate are reported.The growth and characterization of the barrier layer are the key points of getting the SW/MW dual-band HgCdTe material on Si substrate with good crystal quality and parameter accuracy.After the optimization growth of the barrier layer,the diameter of the defect is less than 10μm and defect density is less than 2000 cm-3.The composition of barrier layer in dual band HgCdTe is obtained by the photoluminescence(PL) spectrum.
参考文献
相似文献
引证文献
引用本文
高达,王经纬,王丛,许秀娟. Si基双色碲镉汞材料阻挡层生长及表征[J].激光与红外,2018,48(8):1005~1008 GAO Da, WANG Jing-wei, WANG Cong, XU Xiu-juan. Growth and characterization of barrier layer in dual band HgCdTe on Si composite substrate[J]. LASER & INFRARED,2018,48(8):1005~1008