The long-wave HgCdTe detector infrared with CdTe/ZnS composite passivation films is prepared.After the CdTe passivation film was annealed,CdTe and MCT was diffused with each other in the interface,and the quality of CdTe passivation film was improved.Based on the wet etching technology,600×18@15μm linear-array and 640×512@15 μm focal plane array long wavelength HgCdTe device were prepared,respectively.After the I-V test of linear-array was completed,CdTe/ZnS composite passivation films can effectively reduce the surface leakage current of long-wave HgCdTe device,and the performance of reverse current was good.After the focal plane array(FPA) was tested at the temperature of 77 K,the NETD was 26.7 mK,the effective pixel rate of FPA was 95.4%,and the target was imaged at room temperature.During the test process,there are about 4% blind pixels caused by noise,and the noise was caused by the partial passivation invalidation,which shows that the deposit of passivation films and the preparation of FPA technology can be improved in future.