The latest research progress on materials and devices of dual-band MCT based on molecular beam epitaxy were presented.High quality MCT dual-band thin films were prepared by MBE technology and improvements on macro-defects and crystal quality were made.Wafers were measured by SEM,FTIR,XRD.FPAs were produced by mating devices from these wafers to dual-band read-out integrated circuits.The FPAs exhibited high optical-electronic quality at 80K.