The ion coupled plasma etching(ICP)technology is one of the main technology of the fabrication of InSb mesa-focal plan array worldwide.The paper focuses on the effect of Ar vacuum content in the CH4/H2/Ar gas system to the etching morphology and device performance,when etching InSb material using ICP etching technology.The InSb etching gas systems are set with different Ar content while other experiment parameters are the same.After the experiments,Scanning Electron Microscope,Laser Scanning Confocal Microscopy are used to test the mesa etching morphology,and I-V test is used to test the etching damage by investigating the device performance.Ar content of 30%~35% in the gas system will result in good mesa etching morphology and less surface damage,which will result in good device performance and meet the etching request.
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李海燕,谭振,陈慧卿,亢喆.干法刻蚀InSb时Ar气含量的选取[J].激光与红外,2018,48(12):1503~1508 LI Hai-yan, TAN Zhen, CHEN Hui-qing, KANG Zhe. The selection of Ar content in the dry etching of InSb material[J]. LASER & INFRARED,2018,48(12):1503~1508