Based on the packaging features of InSb IR detector,orthogonal experiment is designed for studying the parameters such as substrate bending,vacuuming time of adhesive,preparing time of adhesive and solidify condition,which can influence the electrical properties and reliability of InSb chip during die bonding processing.Range and variance is calculated to evaluate the influence level of the parameters on InSb chip.The results show that the solidify condition has the greatest influence on the electrical performance of the InSb chip after bonding,followed by the preparing time of adhesive,while the vacuuming time of adhesive and the flatness of the substrate have relatively little influence.According to the optimal combination and poor combination of parameters,the stress in InSb chip caused by different combination is investigated with XRD,and the results were consistent with the orthogonal experiment.
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沈祥伟,朱旭波,张小雷,张力学,李春强,高创特. InSb红外探测器芯片粘接工艺研究[J].激光与红外,2019,49(1):77~81 SHEN Xiang-wei, ZHU Xu-bo, ZHANG Xiao-lei, ZHANG Li-xue, LI Chun-qiang, GAO Chuang-te. Research on die bonding of InSb IR detector[J]. LASER & INFRARED,2019,49(1):77~81