In order to satisfy the high resolution requirement of lithography exposure optical system,which wavelength is 193 nm,numerical aperture NA is 1.35,as well as its node is 45 nm,a novel lighting system with high uniformity has been proposed.The compensator of lighting system can adjust the energy distribution of illumination field,deduce the residual in-homogeneity of system,and ensure that higher uniformity index on the surfaces of mask and silicon.Through CODE V software,the uniformity of the lighting system was simulated.It is demonstrated that,under the traditional and off axis illumination mode,this system make the uniform of mask lower than 0.5%.Compared with traditional uniform illumination unit,while the mechanical design and control difficulty of lithography illumination system weren’t increased,the new uniform compensator improved the uniformity of lithography illumination system.So the device has the better applied value and practical significance.