The parameters of molecular beam epitaxy (MBE) growth of HgCdTe on Si substrate were optimized by orthogonal test. The defect density and defect scale were taken as the evaluation criterion. Three factors,growth temperature,Hg/Te ratio,and growth rate,were used as the variable parameters respectively in the three-factor,three-level orthogonal test method. The results showed that the growth temperature had the greatest influence on the defects of HgCdTe,followed by the growth rate and the Hg/Te ratio. The growth parameters obtained by orthogonal test are as follows:the growth temperature is 212 ℃,the flux of Hg is 61sccm,and the growth rate is 1.5 μm/h. The defect density of the obtained HgCdTe material is within 500cm-2,and the average defect diameter is less than 3.5 μm.
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葛玉斌,高达,王经纬,王丛.基于正交试验方法的Si基碲镉汞工艺优化[J].激光与红外,2019,49(2):209~212 GE Yu-bin, GAO Da, WANG Jing-wei, WANG Cong. Optimized research on HgCdTe film on Si composite substrate based on orthogonal test method[J]. LASER & INFRARED,2019,49(2):209~212