An amorphous silicon germanium film(a-SixGey) for micro-bolometer was prepared by plasma enhanced chemical vapor deposition(PECVD).The influence of GeH4 /SiH4 on the electrical properties of thin films(TCR and conductivity) was studied.The results show that with the increase of flow rate ratio GeH4 /SiH4,the TCR decreases and the conductivity increases.The films presented high TCR values of around 3.5%/K-1,moderate conductivity value of 1.47×10-3(Ω·cm)-1 and excellent resistance uniformity respectively at room temperature,which had favorable application prospect in heat-sensitive material of un-cooled micro-bolometer.