With the continuous development of infrared detection technology,the market puts forwards more and more requirements to the infrared detectors,such as high resolution,high working stability,low cost,and miniaturization.So the technology for the fabrication of infrared detector photosensitive chip will be continuously explored in the direction of large array and small spacing.Based on the market demand,this paper,from the perspective of technology development,studies the use of ion implantation technology and dry etching technology to prepare the photosensitive chip,so as to achieve the preparation of high-performance,narrow spacing and miniaturized photosensitive chips,laying a technical foundation for the preparation of high-resolution chips in the future.This paper introduces the preparation of 128×128(15 μm) and 128×128(10 μm) devices.The I-V tests of both devices are good,the performance of Dewar encapsulated component 128×128(15 μm) is good.