This paper mainly introduces the basic parameters of several alternative substrate materials for growing HgCdTe/CdTe Si substrates by MBE technology,as well as the latest growth processes and results of different materials,and comparative analysis of their growth results.A substrate,which is more suitable for replacing the Si substrate to grow HgCdTe/CdTe is selected.Through a series of comparisons,it is concluded that the most promising alternative substrate is GaSb substrate,which is the direction of future development.