In this study,a new ROIC indium bump fabrication process for HgCdTe detector with a spacing of 10 μm between bumps is developed.Unlike the conventional stripping method,the ion etching method is used to precisely etch the indium metal.The developed method achieves taller indium bumps (>6 μm) with lower nonuniformity (<±5 %).This new fabrication process well solved the problem of insufficient height,lower uniformity and adhesion of indium bumps with small spacing,which greatly improved the success of flip-chip bonding of small pixel pitch infrared detector.