After the years of research and development,HgCdTe infrared focal plane array(FPA) detector has reached the level of mass production.The excellent performance of HgCdTe infrared detector cannot leave the high quality epitaxial material,the thickness of epitaxial material uniformity and components,the control of surface defects and extensional HgCdTe/CdZnTe substrate lattice matching degree is the key factor is the need to control in mass production,mass production of infrared detector also give HgCdTe epitaxial material quality stability and consistency of control put forward higher requirements.This paper introduces the control of these key indexes in the mass production of HgCdTe epitaxial material and the improvement of the infrared focal plane performance after the epitaxial quality optimization.