In this paper,InSb based MBE epitaxial InSb(InAlSb) material process and device performance in recent years were analyzed and summarized,and the existing problems were discussed.InSb-based epitaxial materials (especially InAlSb) do have the advantages of low dark current,noise suppression,high operating temperature and temperature stability,but many defects in the materials affect the detector′s signal current,detection rate,response rate and resistance.Molecular (atomic) hydrogen deoxidation technology,growth temperature,V/III ratio and other process parameters optimization can reduce the material surface defects,improve the uniformity and consistency of the pixel;Continuous optimization of material structure and doping can improve the detector′s signal response and operating temperature.The continuous optimization of etching and other device processes can lay a foundation for the preparation of larger focal plane arrays.