外接电容对脉冲激光辐照Si-APD时的温升影响
DOI:
作者:
作者单位:

作者简介:

通讯作者:

基金项目:

国家自然科学基金项目(No.61805024)资助


Effect of external capacitor on the temperature rise of Si avalanche photodiodes irradiated by pulsed laser
Author:
Affiliation:

Fund Project:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
    摘要:

    硅基雪崩光电二极管(Si-APD)在实际应用中通常需要串联电容来滤除直流信号分量,以便于后续电路对脉冲信号进行提取和放大。另外,Si-APD吸收激光能量后往往导致自身的温升而影响了探测性能。基于此,本论文首次建立了毫秒脉冲激光辐照外接电容电路中Si-APD的热传导模型,并据此对Si-APD的表面温升特性开展了模拟仿真和实验研究。结果表明由于外接电容对回路中电流的阻碍作用,降低了Si-APD中p-n结内部的焦耳热,从而使得外接电容条件下的Si-APD表面温升小于无外接电容的情况,并且电容越小,Si-APD的温升越低。

    Abstract:

    Si avalanche photodiode (Si-APD) usually need series capacitors in practical applications to filter out the DC component,so as to facilitate the subsequent circuit to extract and amplify the pulse signal.In addition,Si-APD often leads to its own temperature rise after absorbing laser energy,which affects the detection performance.Based on this,in this study,a theoretical model is proposed for Si-APD in an external capacitor circuit,irradiated by millisecond (ms) pulse laser.The surface temperature characteristics of the Si-APD were studied via simulations and experiments.The results show that the current in the circuit is affected by the capacitor,and the heat dissipation of the Joule heat source inside the p-n junction in the Si-APD is reduced.The temperature rise in the Si-APD with an external capacitor is smaller than that without an external capacitor,and the smaller the capacitor,the lower the surface temperature rise in the Si-APD.

    参考文献
    相似文献
    引证文献
引用本文

陈良,魏智,王頔,刘红旭,金光勇.外接电容对脉冲激光辐照Si-APD时的温升影响[J].激光与红外,2021,51(4):460~464
CHEN Liang, WEI Zhi, WANG Di, LIU Hong-xu, JIN Guang-yong. Effect of external capacitor on the temperature rise of Si avalanche photodiodes irradiated by pulsed laser[J]. LASER & INFRARED,2021,51(4):460~464

复制
分享
文章指标
  • 点击次数:
  • 下载次数:
历史
  • 收稿日期:
  • 最后修改日期:
  • 录用日期:
  • 在线发布日期: 2021-05-11