制冷要求仍然是制约中红外探测器应用的主要因素。设计了一种异质pin结构的InSb雪崩光电二极管。采用宽禁带、低复合率的材料GaSb和InP形成异质结,并将I区设计成吸收、倍增层分离的雪崩区域。该异质结构有效地抑制了扩散电流,在300K时,JAuger被显著抑制在大小为1×10-7 A/cm2的水平。器件的主要限制是SRH复合和带对带隧穿。为了优化器件的性能,详细讨论了暗电流机理,证明了较低的杂质浓度有利于雪崩过程。在300K时,吸收峰位于5.1μm附近,光响应度为2.16 A/W,其增益为5.7,比检测率为2.866×109cm·Hz1/2·W-1。
The refrigeration requirements are still the main restrictions in the application of mid-wave infrared detector.In this work,a hetero-pin structure InSb Avalanche Photodiode was designed.The GaSb and InP with wide bandgap and lower recombination rate were used to form the heterojunction,and the I region was designed as a separated absorption and multiplication layer.The diffusion current was effectively suppressed by heterostructure,and the JAuger was obviously inhibited at the level of 1×10 -7 A/cm2 at 300K.The main limitation of device was the SRH recombination and band to band tunneling.For optimizing the performance,the dark current mechanism was discussed and the lower impurity concentration was proved to be beneficial for the avalanche process.At 300K,the absorption peak was about 5.1μmwith a responsivity of 2.16 A/W,the optimized gain was 5.7 and the specific detectivity was 2.866×109cm·Hz 1/2·W -1.
XIAO Sheng, YE Wei, BIAN Ning-Tao, ZHANG Qi. Design and characterization of mid-wave infraredheterostructure InSb APD detector[J]. LASER & INFRARED,2021,51(7):888~896