In view of the demand for silicon oxide films in the semiconductor industry,the Plasma Enhanced Chemical Vapor Deposition (PECVD) technology is introduced. The relationship between film thickness uniformity and structure of spray plate hole and process parameters of SiO2 film are studied by PECVD equipment. The experimental results show that the uniformity of SiO2 film is mainly influenced by the size and structure of spray plate hole. In terms of process parameters,the film thickness uniformity of SiO2 film is mainly affected by the pressure of the reaction chamber. Through the comprehensive adjustment of structure and process parameters,a SiO2 film with good film thickness uniformity is prepared.