The contact of HgCdTe electrode is an important part of the infrared focal plane detector,which determines the performance and stability of the device.However,high energy ions may cause damage to the surface of HgCdTe in the deposition process.In this paper,an ion beam deposition system is used to deposit metal electrodes,and the effects of beam current；beam voltage and annealing on the HgCdTe infrared detector were investigated.The results show that the surface of HgCdTe would be damaged when the electrode is grown,and the damage to the material surface will be aggravated with the increase of ion energy.In the I V curve,the devices with large electrode deposition damage show breakdown phenomenon,after heat treatment,the damage caused by excessive energy deposition can be repaired.