碲镉汞雪崩光电二极管近年研究及应用进展
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Research and application progress of HgCdTeavalanche photodiodes in recent years
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    摘要:

    碲镉汞雪崩光电二极管(HgCdTe APD)因其具有高增益、高带宽、高量子效率、低噪声的优良性能,在主动/被动成像、激光雷达、波前传感和光子计数等低光子探测领域有着广阔的应用前景,国外研究机构在该领域采用不同的技术路线进行了深入研究。本文阐述了APD原理及结构,重点对近年来国外相关研究进展及应用情况进行了介绍,并对国内研究机构在碲镉汞雪崩光电二极管仿真模拟、器件制备等方面的研究成果进行了总结。

    Abstract:

    HgCdTe avalanche photodiodes (HgCdTe APDs) have broad application prospects in low photon detection fields such as active / passive imaging,lidar,wavefront sensing and photon counting due to its excellent performance of high gain,high bandwidth,high quantum efficiency and low noise.Foreign research institutions have conducted in depth research in this field by adopting different technical routes.In this paper,the principle and structure of APD are described.The research progress and application of HgCdTe APD abroad in recent years are mainly introduced.The research achievements of domestic research institutions in simulation and device preparation of HgCdTe APDs are summarized.

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胡易林,刘铭,王成刚,杨海燕,郝斐.碲镉汞雪崩光电二极管近年研究及应用进展[J].激光与红外,2022,52(3):314~320
HU Yi-lin, LIU Ming, WANG Cheng-gang, YANG Hai-yan, HAO Fei. Research and application progress of HgCdTeavalanche photodiodes in recent years[J]. LASER & INFRARED,2022,52(3):314~320

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  • 最后修改日期:2021-09-29
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  • 在线发布日期: 2022-03-22