As the increasing demand of high quality and large scale HgCdTe Infrared detectors,the study on the growth of HgCdTe on 50mm×50mm CdZnTe (211) B substrate by molecular beam epitaxy is carried out.Through the research on the improvement of wet chemical pretreatment,pretreatment,growth of buffer layer,growth condition of HgCdTe,a stable process for obtaining HgCdTe growing on CdZnTe was developed.The material quality and process repeatability are good.The HgCdTe growing on CdZnTe substrate by the molecular beam epitaxy has a Full Width at Half Maximum (FWHM) of (35±5) arcsec,a composition of 0.2160,and a thickness of 6.06μm.