At present,laser annealing technology is widely used in the field of semiconductor processing,but there are no systematic and clear guidelines on how to select laser conditions for an annealing process,especially in the field of the activation of deeply implanted silicon.In this paper,the influence of laser wavelength and pulse width on the heating depth and the temperature on the backside of the silicon wafer are analyzed by simulating the temperature field in the silicon wafer irradiated by laser.The experimental results show that lengthening the laser wavelength or pulse width is helpful to increase the heating depth of laser annealing.For a specific activation depth,there is an optimal combination of laser wavelength and pulse width,which can minimize the laser pulse energy and the temperature rise on the backside of the silicon wafer.Also,the optimal wavelength and pulse width used in laser annealing process for the activation depth in the range of 1～10μm,which can provide an important reference for the realization of high efficiency laser annealing activation process for deeply implanted silicon.