With great potential for fast broad spectrum photoelectric detection,graphene has excellent optical and electrical properties.In this paper,a high performance graphene N type pyramid silicon heterojunction near infrared photoelectric detector is designed and fabricated.High quality graphene is prepared using chemical vapor deposition (CVD) and transferred to N type pyramid silicon surface by wet transfer to obtain graphene/pyramid silicon heterojunction devices with vertical structure.The experimental results show that the rectifier ratio of the device is up to 6.9×105 in the absence of light.Under the irradiation of 970 nm NIR light,the current switching ratio is as high as 5.3×104,and the current responsiveness,external quantum efficiency,photovoltage responsiveness and specific detection rate can reach 577.6 mA·W -1,73.97%,1.26×106 V·W -1 and 4.92×10 12 Jones,respectively.In addition,the device has a high response speed,with rise and fall times of 22 μs and 14.5 μs respectively.Finally,the stability of the device is also studied.After 3 months in the air,the photocurrent is almost not attenuating,which indicates that the device has excellent air stability.