硅晶圆中注入10 MeV磷的连续激光退火激活
作者:
作者单位:

作者简介:

通讯作者:

基金项目:

广东省重点领域研发计划项目(No.2019B010144001)资助。


Continuous laser annealing for activating 10 MeV implanted phosphorus in silicon wafer
Author:
Affiliation:

Fund Project:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
    摘要:

    基于硅(Si)中高能注入磷(P)的连续激光退火方法展开研究。采用的P离子最高注入能量为10 MeV,在Si中的注入深度可达7μm。分别采用532nm和808nm波长的连续激光退火,照射时间分别为2ms和27ms。结果显示,虽然532nm激光在Si中的穿透深度只有125μm,不到808nm激光的1/10,但由于照射时间较长,热传导起到主要作用。因此,两种退火方案都可以实现整个注入深度的有效激活。532nm连续激光退火实现了93的激活效率,808nm激光退火的激活效率接近100。

    Abstract:

    In this paper,the continuous laser annealing method based on high energy phosphorus(P)implantation in silicon(Si)is studied.The maximum energy of P ion implantation is 10 MeV,and the depth of P ion implantation can reach 7μmin Si.Continuous laser annealing was performed with wavelength of 532 nm and 808 nm for 2 ms and 2.7 ms,respectively.The results show that although the penetration depth of 532 nm laser in Si is only 1.25μm,less than 1/10 of that of 808 nm laser,the heat conduction plays a major role due to the long irradiation time.Therefore,both annealing schemes can achieve effective activation of the entire implantation depth.The activation efficiency of continuous laser annealing with 532 nm is 93%,and that of laser annealing with 808 nm is close to 100%.

    参考文献
    相似文献
    引证文献
引用本文

刘敏,郑柳,何志,王文武.硅晶圆中注入10 MeV磷的连续激光退火激活[J].激光与红外,2022,52(7):1000~1003
LIU Min, ZHENG Liu, HE Zhi, WANG Wen-wu. Continuous laser annealing for activating 10 MeV implanted phosphorus in silicon wafer[J]. LASER & INFRARED,2022,52(7):1000~1003

复制
分享
文章指标
  • 点击次数:
  • 下载次数:
历史
  • 收稿日期:
  • 最后修改日期:
  • 录用日期:
  • 在线发布日期: 2022-07-12