The effects of high and low temperature annealing and cyclic variable temperature annealing on the dislocation density and electrical properties of HgCdTe materials grown by liquid phase epitaxy are investigated by saturated mercury pressure heat treatment.The results show that compared with high and low temperature annealing,the dislocation density of HgCdTe significantly reduced,and the carrier mobility of the material is significantly improved after cyclic variable temperature annealing.It is found that cyclic variable temperature annealing is a better heat treatment method to improve the properties of HgCdTe materials.