二维Bi2O2Se光电特性及其光电子器件研究进展
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[JP2]国家自然科学基金项目(No.U21A20496;No.61922060;No.61775156;No.61805172;No.12104334;No.62174117;No.61905173);山西省自然科学基金面上青年基金(No.20210302123154;No.20210302123169);山西省回国留学人员科研资助项目(No.2021033);山西浙大新材料研究院基础研究类项目(No.2021SXFR008);吕梁市高层次科技人才引进专项项目(No.Rc2020206;No.Rc2020207)资助。


Research progress on two dimensional Bi2O2Se photoelectriccharacteristics and optoelectronic devices
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    摘要:

    二维(2D)材料由于其超薄的厚度、高度的机械柔性、可调谐的带隙以及易于定制的范德华异质结构,被广泛应用于通信、红外探测、航空航天以及生物医学等领域。其中2D Bi2O2Se作为一种新兴的二维层状材料,具有独特的晶体结构、优异的光电特性和良好的环境稳定性,是制备高性能红外光电子器件的优秀候选材料。本文综述了基于2D Bi2O2Se材料光电子器件的研究进展。首先,介绍了2D Bi2O2Se的晶体结构、能带结构及其光电特性。然后,详述了Bi2O2Se材料的常见制备方法,包括化学气相沉积法和水热合成法。此外,综述了Bi2O2Se材料在场效应晶体管、光电探测器和光开关领域的应用现状。最后,我们总结了全文,并对Bi2O2Se材料的发展进行了展望。

    Abstract:

    Two dimensional(2D)materials are widely used in communication,infrared detection,aerospace and biomedical due to their ultrathin thickness,high mechanical flexibility,tunable band gap and easily tailored van der Waals heterostructures.Among them,2D Bi2O2Se is an emerging two dimensional material with unique crystal structure,excellent photoelectric characteristics and superior environmental stability,which is an excellent candidate material for preparing high performance infrared optoelectronic devices.In this paper,the research progress of 2D Bi2O2Se is reviewed.Firstly,the crystal structure and energy band structure of 2D Bi2O2Se and its photoelectric properties are introduced.Then,the common preparation methods of Bi2O2Se materials,including chemical vapor deposition and hydrothermal synthesis,are described in detail.In addition,the current status of applications of 2D Bi2O2Se materials in field effect transistors,photo detectors and optical switches are described.Finally,the paper is concluded and an outlook on the development of Bi2O2Se materials is provided.

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赵子扬,冯琳,冀婷,李国辉,王文艳,温荣,冯丽萍,崔艳霞.二维Bi2O2Se光电特性及其光电子器件研究进展[J].激光与红外,2023,53(6):812~821
ZHAO Zi-yang, FENG Lin, JI Ting, LI Guo-hui, WANG Wen-yan, WEN Rong, FENG Li-ping, CUI Yan-xia. Research progress on two dimensional Bi2O2Se photoelectriccharacteristics and optoelectronic devices[J]. LASER & INFRARED,2023,53(6):812~821

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  • 最后修改日期:2022-09-22
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  • 在线发布日期: 2023-06-15
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