Electrode shaping technology is an important part of infrared detector,and ion beam etching technology is suitable for preparation of low damage,high uniformity and productive electrode systems due to its many advantages such as high anisotropy and high resolution. In this paper,the electrode structures of the planar and mesa devices are prepared by ion beam etching. The morphology and structure of the electrodes under different etching conditions are characterized by FIB and SEM,and the effects of different etching angles,energies as well as heat treatment on the infrared detector are studied. The results show that the ion beam etching technology has many advantages such as smooth sidewalls,high uniformity,strong stability,and high process repeatability. Moreover,ion beam etching can also achieve electrode isolation of mesa junction devices,but there are certain metal electrodes on the sidewall of the mesa,which require further optimization of the etching angle. On the effect of heat treatment on etching,the lattice damage caused by low energy etching can be repaired after high temperature activation. High energy etching causes both lattice and electrical damage,and heat treatment can only improve the performance of the PN junction to a certain extent. The Electrical damage forms a serious leakage effect on the surface of the PN junction,weakening the quality factor R0A of the detector.