Sb based avalanche photodiodes (APDs) have garnered significant attention in the field of infrared detection in recent years,due to their superior performance in gain,excess noise and temperature stability.These advantages have established them as key devices in many applications.This review summarizes the research progress made by domestic and international institutes regarding material systems and device architectures of Sb based APDs.It compares the effects of different device structures on performance metrics and explores potential technical pathways for achieving higher gain and lower noise characteristics.Among the typical structures,the SAM structure appears to be the most promising candidate for future development.Finally,this paper provides a perspective on the future technological advancement of Sb based APDs.