低掺杂浓度n型GaAs欧姆接触的研究
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Study on Ohmic contacts of low doped concentration n-GaAs
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    摘要:

    利用传输线方法(TLM)重点研究了低掺杂浓度(2×1017at/cm3)n型GaAs接触层的欧姆接触,通过改变AuGe/Ni的厚度比、合金化的温度和时间等参数,获得了最优化的制备条件:AuGe/Ni/Au的厚度为50nm/25nm/100 nm,退火温度为400 ℃,退火时间为120s时,欧姆接触电阻率为最低3.52×10-4Ωcm-2,这一结果为量子阱结构太赫兹探测器芯片的制备奠定了基础。

    Abstract:

    In this paper,the Ohmic contact of low doped concentration n-GaAs (2×1017at/cm3) is studied by using transmission line model (TLM). The effects of controllable processing factors such as the Ni/AuGe thickness ratio,alloy temperature and alloy time to characteristics of the ohmic contacts are analyzed. Contact qualities including specific contact resistance,contact uniformity,and surface morphology are optimized by controlling these factors. Using the optimized process conditions,a specific contact resistance of 3.52×10-4Ωcm-2 is achieved. This is a basic result for the fabrication of terahertz quantum-well photodetector.

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宋淑芳,赵建建,谭振,孙浩.低掺杂浓度n型GaAs欧姆接触的研究[J].激光与红外,2013,43(11):1252~1255

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  • 在线发布日期: 2013-10-31
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