The damages in HgCdTe dry etching were studied. The contact hole of HgCdTe samples were fabricated by inductively coupled plasma(ICP) dry etching and wet etching. The morphology of the etched surface were analyzed by scanning electron microscope(SEM) and laser scanning microscope(LSM),and the damages were analyzed by the current-voltage characteristic curve. The experiment results show that the p-type hole of HgCdTe sample can easily be converted to n-type hole by using dry etching,so a kind of new dry mixed etching technique is proposed. It uses two step dry etching and can effectively reduce the introduced damage.